We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavior into graphene is altered by the interactions with phonons and the presence of disorder. We extract prop- erties of graphene and observe multiple phonon-enhanced tunneling thresholds. Finally, differences in the measured properties of two devices are used to shed light on mutually-contrasting previous results of scanning tunneling microscopy in graphene.
Single-layer and bilayer carbon and hexagonal boron nitride nanoscrolls as well as nanoscrolls made of bilayer graphene/hexagonal boron nitride heterostructure are considered. Structures of stable states of the corresponding nanoscrolls prepared by rolling single-layer and bilayer rectangular nanoribbons are obtained based on the analytical model and numerical calculations. The lengths of nanoribbons for which stable and energetically favorable nanoscrolls are possible are determined. Barriers to rolling of single-layer and bilayer nanoribbons into nanoscrolls and barriers to nanoscroll unroll…
Hexagonal boron nitride is widely used as a substrate for two-dimensional materials in both electronic and photonic devices. Here, we demonstrate that two-dimensional hexagonal boron nitride is also an ideal substrate for one-dimensional single-walled carbon nanotubes. Nanotubes directly attached to hexagonal boron nitride show bright photoluminescence with narrow linewidth at room temperature, comparable to air-suspended nanotubes. Using photoluminescence excitation spectroscopy, we unambiguously assign the chiralities of nanotubes on boron nitride by tracking individual tubes before and afte…
Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low density of defects. By placing graphene nanoribbons on high quality hexagonal boron nitride it is possible to create ideal quasi one dimensional (1D) systems with very high mobility. The availability of high quality one-dimensional electronic systems is of great interest also given that when in proximity to a superconductor they can be effectively engineered to realize Majorana bound states. In this work we study how a b…
Low temperature photoluminescence spectra of a color center in hexagonal boron nitride are analyzed. The acoustic phonon sideband can be described by a deformation coupling proportional to strain to a phonon bath that is effectively two dimensional. The optical phonon band is described by Frohlich coupling to the LO-branches, and a deformation coupling proportional to lattice displacement for the TO-branch. The resonances expressed in the optical band vary from defect to defect, in some emitters, coupling to out-of-plane polarized phonons is reported.
We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS$_2$. From the analysis we obtain information regarding the phase-coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase-coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to non-encapsulated MoS$_2$. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is fou…
With the ever-growing interest in quantum computing, understanding the behaviour of excitons in monolayer quantum dots has become a topic of great relevance. In this paper, we consider a Wannier exciton confined in a triangular quantum dot of hexagonal Boron Nitride. We begin by outlining the adequate basis functions to describe a particle in a triangular enclosure, analyzing their degeneracy and symmetries. Afterwards, we discuss the excitonic hamiltonian inside the quantum dot and study the influence of the quantum dot dimensions on the excitonic states.
Negative friction coefficients, where friction is reduced upon increasing normal load, are predicted for superlubric graphite-hexagonal boron nitride heterojunctions. The origin of this counterintuitive behavior lies in the load-induced suppression of the moiré superstructure out-of-plane distortions leading to a less dissipative interfacial dynamics. Thermally induced enhancement of the out-of-plane fluctuations leads to an unusual increase of friction with temperature. The highlighted frictional mechanism is of a general nature and is expected to appear in many layered material heterojunctio…
Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses
The University of Tokyo（东京大学）；National Institute for Materials Science（国立材料研究所）；Tokyo University of Technology（东京都立科学技术大学）；National Institute of Advanced Industrial Science and Technology（产业技术综合研究所）
Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V-characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon.
Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride
我们对迁移率高达40 000 cm $^{-1}$ V $^{-1}$ s $^{-1}$的氮化硼基单层石墨烯器件进行了自旋输运测量。我们可以在室温下观察到长度达20 μm的自旋输运，这是迄今为止对石墨烯测量的最大距离。由于增强的载流子扩散，自旋弛豫长度测量到4.5 μm。弛豫时间类似于较低质量的基于SiO $_2$的器件的值，约为200 ps。我们发现，在几乎相等的措施，由Elliott-Yafet和D 'Yakonov-Perel机制的弛豫速率。
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate in…
Integration of individual two-dimensional materials into heterostructures is a crucial step which enables development of new and technologically interesting functional systems of reduced dimensionality. Here, well-defined lateral heterostructures of hexagonal boron nitride and graphene are synthesized on Ir(111) by performing sequential chemical vapor deposition from borazine and ethylene in ultra-high vacuum. Low-energy electron microscopy (LEEM) and selected-area electron diffraction (μ-LEED) show that the heterostructures do not consist only of hexagonal boron nitride (an insulator) and gra…
Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride (hBN) subject to off-diagonal moire vector potential terms that can alter the valley Che…
We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with in-plane linear polarization. The measurements are compared to Photoluminescence of Excitation (PLE) spectra, that maps the electron-optical-phonon sideband of the excited state. The main qualitative difference is a red-shift in the longitudinal optical phonon peak associated with $E_{1u}$ symmetry at the zone center. We argue that this is consistent with r…
In this paper we theoretically describe the absorption of hexagonal boron nitride (hBN) single layer. We develop the necessary formalism and present an efficient method for solving the Wannier equation for excitons. We give predictions for the absorption of hBN on quartz and on graphite. We compare our predictions with recently published results [Elias {\it et al.}, Nat. Comm. {\bf 10}, 2639 (2019)] for a monolayer of hBN on graphite. The spontaneous radiative lifetime of excitons in hBN is also computed. We argue that the optical properties of hBN in the ultraviolet are very useful for the st…
We have synthesized boron nitride nanotubes (BNNTs) in an arc in presence of boron and nitrogen species only, without transition metals. We find that BNNTs are often attached to pure boron nanoparticles, suggesting that root-growth is a likely mechanism for their formation. To gain further insight into this process we have studied key mechanisms for root growth of BNNTs on the surface of a liquid boron droplet by ab initio molecular dynamics simulations. We find that nitrogen atoms reside predominantly on the droplet surface where they organize to form boron nitride islands below 2400 K. To mi…
Metal nanostructures confined between sp2 hybridized 2D materials and solid supports are attracting attention for their potential application in new nanotechnologies. Model studies under well-defined conditions are valuable for understanding the fundamental aspects of the phenomena under 2D covers. In this work we investigate the intercalation of iron atoms through a single layer of mixed graphene and hexagonal boron nitride on Pt(111) using a combination of spectroscopic and microscopic techniques. Thermally activated diffusion of iron proceeds preferentially under graphene and only partially…
