用Monte Carlo方法研究掺杂CH4或CF4的纯ZnO与ZnO以及平面与圆柱结构的ZnO电致发光产额的涨落
A Monte Carlo study of the fluctuations in Xe electroluminescence yield: pure Xe vs Xe doped with CH4 or CF4 and planar vs cylindrical geometries
摘要：
采用蒙特卡罗模拟研究了在适当的电场作用下，亚电离初级电子在气体中漂移产生的电致发光（EL）产额H（也称为二次闪烁）的波动，并将纯的CH 4和CF 4掺杂的CH 4气体进行了比较.这项工作是仿照气体探测器的气体比例闪烁型，放大是通过生产EL下的电荷倍增自由制度。分子气体的添加减少了电子扩散，这是大尺寸检测器中的期望效果，其中初级电子漂移穿过长吸收/漂移区。然而，分子的存在减少了H并增加了其波动。在CF 4的情况下，由于在EL场范围内显著的电子附着，效果非常强，排除了CF 4作为可接受的添加剂。CH 4的加入对H及其波动的影响程度要小得多，CH 4浓度低于~1%可能是合适的选择。此外，在圆柱形几何形状下的纯电致发光中的蒙特卡罗计算在低于电荷倍增的制度中已经表明，EL产率H的波动比平面几何形状高一个数量级。然而，对于这两种几何形状，波动对能量分辨率的影响可以忽略不计，并且圆柱形几何形状中的阳极半径或平面几何形状中的网格平行度的变化可能是更重要的关注原因。
英文摘要：
Monte Carlo simulation is used to investigate the fluctuations in the Xe proportional electroluminescence (EL) yield H (also known as secondary scintillation) produced by sub-ionization primary electrons drifting in the gas under appropriate electric fields, comparing pure Xe gas with Xe doped with CH4 or CF4. The work is modeled on gas detectors of the gas proportional-scintillation type, where amplification is achieved through the production of EL under a charge-multiplication free regime. The addition of the molecular gases to Xe reduces electron diffusion, a desirable effect in large size detectors where primary electrons drift across a long absorption/drift region. However, the presence of the molecules reduces H and increases its fluctuations. In the case of CF4, the effects are very strong due to significant electron attachment in the EL field range, ruling out CF4 as an acceptable additive. The addition of CH4 affects H and its fluctuations to a much lower extent, and CH4 concentrations lower than ~1% may be an appropriate choice. In addition, Monte Carlo calculations in pure Xe under cylindrical geometry in a regime below charge multiplication have shown that fluctuations in the EL yield H are an order of magnitude higher than for planar geometry. For both geometries, though, the fluctuations have a negligible effect on the energy resolution, and variations of the anode radius in cylindrical geometry or grid parallelism in planar geometry may be a more significant cause of concern.
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