Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well

Lattice-pseudospin and spin-valley polarizations in dual ferromagnetic-gated silicene junction

We study spin-valley and lattice-pseudo spin currents in a dual ferromagnetic-gated silicene-based junction. Silicene has buckled atomic structure which allows us to take sublattice-dependent ferromagnetism into account in the investigation. One of the study results show that transmission at the junctions exhibits anisotropic property only in anti-parallel cases. Interestingly, the studied junctions can be switched from a pure spin-polarizer to a pure valley-polarizer by reversing directions of exchange fields in the parallel junctions. The perfect control of spin-valley currents can be done o…

Tunable quantum spin Hall effect in double quantum wells

The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of helical edge modes protected by time-reversal symmetry, has been demonstrated in HgTe-based quantum wells (QWs) with an inverted bandgap. We analyze the topological properties of a generically coupled HgTe-based double QW (DQW) and show how in such a system a TI phase can be driven by an inter-layer bias voltage, even when the individual layers are non-inverte…

掺杂的稀疏Wigner-Mott绝缘体中的自旋极化子与铁磁性

Spin-polarons and ferromagnetism in doped dilute Wigner-Mott insulators

本研究针对过渡金属二硫化物莫尔异质结构在稀疏填充下的磁态问题，提出低浓度掺杂电子会形成自旋极化子并诱导铁磁有序，还预测了该过程在系统磁化分布中的特征，为理解Wigner-Mott绝缘体的磁性提供了新视角。

Superexchange dominates in magnetic topological insulators

It has been suggested that the enlarged spin susceptibility in topological insulators, described by Van Vleck's formalism, accounts for the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities. In contrast, earlier studies of HgTe and related topological systems pointed out that the interband analog of the Ruderman-Kittel-Kasuya-Yosida interaction (the Bloembergen-Rowland mechanism) leads to antiferromagnetic coupling between pairs of localized spins. Here, we critically revisit these two approaches, show their shortcomings, and elucidate why the …

Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.

The Quantum Hall Effect: Novel Excitations and Broken Symmetries

These pedagogical lecture notes present a general introduction to most aspects of the integer and fractional quantum Hall effects. This is followed by an extensive discussion of quantum Hall ferromagnetism, both for spins in single-layer systems and `pseudospins' in double-layer systems. The effective field theories describing various broken symmetry states and `skyrmion' and `meron' spin textures are derived and discussed in some detail. Pedagogical presentations on Berry phases and lowest Landau level projection are included in appendices.

Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν = 1 Landau Level Crossing

In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. We study here a very high-quality, low-density, two-dimensional hole system, confined to a 30-nm-wide (001) GaAs quantum well, in which the two lowest-energy Landau levels can be gate tuned to cross at and…

Anomalous in-gap edge states in two-dimensional pseudospin-1 Dirac insulators

Quantum materials that host a flat band, such as pseudospin-1 lattices and magic-angle twisted bilayer graphene, can exhibit drastically new physical phenomena including unconventional superconductivity, orbital ferromagnetism, and Chern insulating behaviors. We report a surprising class of electronic in-gap edge states in pseudospin-1 materials without the conventional need of band-inversion topological phase transitions or introducing magnetism via an external magnetic type of interactions. In particular, we find that, in two-dimensional gapped (insulating) Dirac systems of massive spin-1 qu…

Landau Level Anticrossing Manifestations in the Phase Diagram Topology of a Two Subband System

In a two-subband GaAs/AlGaAs two-dimensional electron system, the phase diagram of longitudinal resistivity ρ_xx in density and magnetic field plane exhibits an intriguing structure centered at filling factor ν= 4 which is strikingly different from the ring-like structures at lower magnetic fields. Thermal activation measurements reveal an anticrossing gap on each boundary of the structure where intersubband Landau Levels with parallel or antiparallel spin are brought into degeneracy. While the physics of the anticrossing can be ascribed to the pseudospin quantum Hall ferromagnetism, as report…