石墨烯基太赫兹光调制器的独特前景
Unique prospects of graphene-based THz modulators
摘要：
采用AlGaAs/GaAs异质结构的二维电子气（2DEG）THz调制器的调制深度固有地限制在<30%。金属栅不仅使THz信号衰减（> 90%），而且严重降低了调制深度。金属损耗可以通过具有可调电导率的替代材料显著降低。石墨烯由于其对称的能带结构和与常规半导体中的电子迁移率相当的非常高的空穴迁移率而呈现出对该问题的独特解决方案。石墨烯中的空穴电导率可以在石墨烯-2DEG并联电容器配置中静电调谐，从而更有效地调谐THz透射。在这项工作中，我们表明，通过调谐石墨烯中狄拉克点处的费米能级，可以实现> 90%的调制深度，同时将信号衰减降至< 5%。
英文摘要：
The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to < 30%. The metal gate not only attenuates the THz signal (> 90%) but also severely degrades the modulation depth. The metal losses can be significantly reduced with an alternative material with tunable conductivity. Graphene presents a unique solution to this problem due to its symmetric band structure and extraordinarily high mobility of holes that is comparable to electron mobility in conventional semiconductors. The hole conductivity in graphene can be electrostatically tuned in the graphene-2DEG parallel capacitor configuration, thus more efficiently tuning the THz transmission. In this work, we show that it is possible to achieve a modulation depth of > 90% while simultaneously minimizing signal attenuation to < 5% by tuning the Fermi level at the Dirac point in graphene.
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