用于纳米技术的亚10 nm单颗粒Au纳米点的大阵列
Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology
摘要：
可以使用电子束光刻在硅上形成小至5-8 nm的单颗粒Au纳米点的均匀阵列。所制造的纳米点是无定形的，热退火将它们转化为覆盖有薄SiO2层的纯Au单晶。这些发现是基于物理测量，如原子力显微镜（AFM），原子分辨率扫描透射电子显微镜，和化学技术，使用能量色散X射线光谱。一个自组装的有机单分子层接枝在纳米点上，其特征在于与纳米横向分辨率的化学。我们使用扩展的均匀阵列的纳米点作为一个新的测试平台的分子电子器件。
英文摘要：
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO2 layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive x-ray spectroscopy. A self-assembled organic monolayer is grafted on the nanodots and characterized chemically with nanometric lateral resolution. We use the extended uniform array of nanodots as a new test-bed for molecular electronics devices.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
