不同纳米结构的电行为中证明的电压渗滤阈值
Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures
摘要：
研究和讨论了三种纳米结构中的逾渗现象：前两种是纳米硅基系统，嵌入在非晶SiO2基质中的Si纳米点和由氧化纳米线网络形成的多孔硅，第三种是嵌入在非晶SiN中的多壁碳纳米管网络。在前两个系统上测量的电流-电压特性呈现具有相同形状的电压渗流阈值-电流的饱和平台区域，随后突然增加。在非晶SiN中嵌入的多壁碳纳米管网络上测得的电流-电压和电导-电压曲线呈现非周期性振荡，且与温度无关。这些振荡被解释为电压逾渗阈值。
英文摘要：
Percolation phenomena are investigated and discussed in three kinds of nanostructures: first two are nanocrystalline silicon-based systems, Si nanodots embedded in amorphous SiO2 matrix and porous silicon formed by an oxidized nanowire network, and the third consisting of a multi-walled carbon nanotube network embedded in amorphous SiN. The current-voltage characteristics measured on first two systems present voltage percolation thresholds with the same shape - a saturation plateau region of the current, followed by an abrupt increase. The current-voltage and conductance-voltage curves measured on multi-walled carbon nanotube network embedded in amorphous SiN present non-periodic and temperature independent oscillations. These oscillations are interpreted as voltage percolation thresholds.
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