具有高密度和高长径比纳米晶须的黑硅
Black Silicon with high density and high aspect ratio nanowhiskers
摘要：
本文报道了用氯等离子体反应离子刻蚀法在硅基片上形成的黑硅（b-Si）的物理性质，试图阐明其形成机理和所观察到的具有广泛应用前景的光电现象的起源。由高密度和高纵横比的亚微米长度的晶须或支柱，以及在3 nm以下的尖端直径的b-Si表现出强烈的光致发光（PL）在可见光和红外线，这是解释与缺陷，约束效应和近带边发射。结构分析表明，晶须都是结晶的，并被一个薄的硅氧化物层包裹。Si-O-Si键的横光学（TO）和纵光学（LO）声子的红外振动光谱表明，无序诱导的LO-TO光学模耦合可以作为评价b-Si结构质量的有效工具。相同的声子可能在可见光区PL跃迁中耦合到电子。这些纳米级的功能的场发射特性表明，尖端的形状对发射的影响。的纳米晶须的表面形态方面的整体性能进行了讨论。
英文摘要：
Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena which are promising for a variety of applications. The b-Si consisting of high density and high aspect ratio sub-micron length whiskers or pillars with tip diameters of well under 3 nm exhibits strong photoluminescence (PL) both in visible and infrared, which are interpreted in conjunction with defects, confinement effects and near band-edge emission. Structural analysis indicate that the whiskers are all crystalline and encapsulated by a thin Si oxide layer. Infrared vibrational spectrum of Si-O-Si bondings in terms of transverse-optic (TO) and longitudinal-optic (LO) phonons indicates that disorder induced LO-TO optical mode coupling can be an effective tool in assessing structural quality of the b-Si. The same phonons are likely coupled to electrons in visible region PL transitions. Field emission properties of these nanoscopic features are demonstrated indicating the influence of the tip shape on the emission. Overall properties are discussed in terms of surface morphology of the nano whiskers.
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