基于非线性离子漂移模型的二氧化钛忆阻器Abel动力学
Abel Dynamics of Titanium Dioxide Memristor Based on Nonlinear Ionic Drift Model
摘要：
在非线性离子漂移模型下，给出了任意阶窗函数下二氧化钛忆阻器的解析解。作为实现的解决方案，状态特性曲线被证明是一个有用的工具，以确定工作点，波形和饱和水平。通过使用这种表征工具，揭示了相同的输入信号在不同的初始条件下可以输出完全不同的u-i轨道动力学，这是忆阻器的独特性。该方法可以被视为使用BJT或MOS晶体管的特性曲线的类比。基于此模型，我们进一步提出了一类解析可解的忆阻系统，它符合阿贝尔微分方程。基于线性和非线性离子漂移模型的二氧化钛忆阻器的状态方程（EOS）是典型的可积示例，其可以被归类到Abel忆阻器类。这个大家族的阿贝尔忆阻系统提供了一个框架，获得和分析的解决方案，在封闭的形式，这有利于他们的表征在一个更确定性的水平。
英文摘要：
We give analytical solutions to the titanium dioxide memristor with arbitary order of window functions, which assumes a nonlinear ionic drift model. As the achieved solution, the characteristic curve of state is demonstrated to be a useful tool for determining the operation point, waveform and saturation level. By using this characterizing tool, it is revealed that the same input signal can output completely different u-i orbital dynamics under different initial conditions, which is the uniqueness of memristors. The approach can be regarded as an analogy to using the characteristic curve for the BJT or MOS transisitors. Based on this model, we further propose a class of analytically solvable class of memristive systems that conform to Abel Differential Equations. The equations of state (EOS) of the titanium dioxide memristor based on both linear and nonlinear ionic drift models are typical integrable examples, which can be categorized into this Abel memristor class. This large family of Abel memristive systems offers a frame for obtaining and analyzing the solutions in the closed form, which facilitate their characterization at a more deterministic level.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
