We have observed an electronic energy level crossing in a molecular nanomagnet (MNM) using muon-spin relaxation. This effect, not observed previously despite several muon studies of MNM systems, provides further evidence that the spin relaxation of the implanted muon is sensistive to the dynamics of the electronic spin. Our measurements on a broken ring MNM [H_{2}N^{t}Bu^{is}Pr][Cr_{8}CdF_{9}(O_{2}CC(CH_{3})_{3})_{18}] (hereafter Cr_{8}Cd), which contains eight Cr ions, show clear evidence for the S=0 to S=1 transition that takes place at B_{c}=2.3 T. The crossing is observed as a resonance-like dip in the average positron asymmetry and also in the muon-spin relaxation rate, which shows a sharp increase in magnitude at the transition and a peak centred within the S=1 regime.
Spin freezing and dynamics in Ca_{3}Co_{2-x}Mn_{x}O_{6} (x ~ 0.95) investigated with implanted muons: disorder in the anisotropic next-nearest neighbor Ising model
The kagome staircase compounds Ni$_{3}$V$_{2}$O$_{8}$ and Co$_{3}$V$_{2}$O$_{8}$ studied with implanted muons
本文报道了可果美阶梯化合物Ni $_{3}$ V $_{2}$ O $_{8}$和Co $_{3}$ V $_{2}$ O $_{8}$的μ子自旋弛豫（$μ^{+}$ SR）测量结果.这些材料的磁性行为可以用两个不等价的磁性离子位点来描述，称为脊柱位点和交叉结合位点。我们的$μ^{+}$ SR结果使我们能够单独探测这些位置中的每一个，揭示这些位置附近的局部磁场的分布。我们不仅能够确认的基础上提出的散装测量的各个阶段的磁结构，但也给在每个阶段的局部场分布的温度演变的洞察。
Electronic charge transfer driven by spin cycloidal structure
利用μ子自旋旋转和共振软X射线散射实验研究了原型多铁性材料RMn_2O_5（R = Y，Sm）的局域电位移是由自旋电流机制驱动的.小的局部电位移进行了评估，通过观察自旋极化在配体O离子，其中注入μ子作为一个非常敏感的探针。我们的研究结果为YMn2O5提供了证据，形成一个自旋摆线链与Mn自旋的O离子的自旋极化增加成比例的Mn离子的矢量自旋手征（Si x Sj）。这种关系强烈地表明，O和Mn离子之间的电荷转移是由SC机制驱动的，这导致了伴随O自旋极化的铁电性。
From magnetic order to quantum disorder: a $μ$SR study of the Zn-barlowite series of $S={\frac{1}{2}}$ kagomé antiferromagnets, Zn$_{x}$Cu$_{4-x}$(OH)$_{6}$FBr
Microscopic magnetic phase evolution in the Weyl semimetal Mn$_3$Sn revealed by $μ^+$SR
KTH Royal Institute of Technology（皇家理工学院）；Uppsala University（乌普萨拉大学）；PSI Center for Neutron and Muon Sciences CNM（瑞士保罗谢勒研究所中子与μ子科学中心）；University of Luxembourg（卢森堡大学）；Forschungszentrum Jülich GmbH（于利希研究中心有限公司）；TRIUMF（特利昂夫实验室）；Institut Laue-Langevin（朗之万-桂良研究所）；RWTH Aachen（亚琛工业大学）
