离子注入悬浮石墨多层膜的可调磁电阻行为
Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation
摘要：
我们报道了一种通过离子注入点缺陷工程在悬浮石墨多层膜中实现的可调磁电阻（MR）行为。我们发现，离子注入急剧改变的MR行为：在纯石墨多层膜的线性正MR转化为负MR后，引入显着的短程障碍（注入硼或碳原子），符合最近的非马尔可夫输运理论。我们的实验表明，非马尔可夫过程中的有趣的MR行为的石墨系统的重要作用，并打开了一个新的窗口，了解输运现象以外的德鲁德-玻尔兹曼方法和定制的石墨层的电子性质。
英文摘要：
We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant short-range disorders (implanted boron or carbon atoms), consistent with recent non-Markovian transport theory. Our experiments suggest the important role of the non-Markovian process in the intriguing MR behavior for graphitic systems, and open a new window for understanding transport phenomena beyond the Drude-Boltzmann approach and tailoring the electronic properties of graphitic layers.
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