非共振X射线发射法测定X射线总吸收系数
Determination of total x-ray absorption coefficient using non-resonant x-ray emission
摘要：
最近开发了一种称为逆部分荧光产额（IPFY）的X射线吸收光谱（XAS）的替代测量方法，该方法既具有体积敏感性又不受饱和效应的影响。在这里，我们表明，IPFY的角度依赖性可以提供一个措施，直接成比例的总X射线吸收系数，$μ(E)$。相反，荧光产额（FY）和电子产额（EY）光谱从$μ(E)$偏移和/或失真未知且难以测量的量。此外，我们的测量可以确定$μ(E)$的绝对单位，没有自由参数，通过缩放到$μ(E)$在非共振发射能量。我们证明了这种技术与NiO和NdGaO $_3$的测量。确定边缘台阶上的$μ(E)$可以使用XAS作为材料成分的非破坏性测量。在NdGaO $_3$中，我们还证明了IPFY用于绝缘样品的实用性，其中EY或FY都不能提供可靠的光谱，由于样品充电和自吸收效应，分别。
英文摘要：
An alternative measure of x-ray absorption spectroscopy (XAS) called inverse partial fluorescence yield (IPFY) has recently been developed that is both bulk sensitive and free of saturation effects. Here we show that the angle dependence of IPFY can provide a measure directly proportional to the total x-ray absorption coefficient, $μ(E)$. In contrast, fluorescence yield (FY) and electron yield (EY) spectra are offset and/or distorted from $μ(E)$ by an unknown and difficult to measure amount. Moreover, our measurement can determine $μ(E)$ in absolute units with no free parameters by scaling to $μ(E)$ at the non-resonant emission energy. We demonstrate this technique with measurements on NiO and NdGaO$_3$. Determining $μ(E)$ across edge-steps enables the use of XAS as a non-destructive measure of material composition. In NdGaO$_3$, we also demonstrate the utility of IPFY for insulating samples, where neither EY or FY provide reliable spectra due to sample charging and self-absorption effects, respectively.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
