混合物理化学气相沉积法在Al2O3基片上制备高Tc和Jc的超薄MgB2薄膜
Ultrathin MgB2 films fabricated on Al2O3 substrate by hybrid physical-chemical vapor deposition with high Tc and Jc
摘要：
采用混合物理化学气相沉积法在（0001）Al2O3衬底上外延生长了厚度为7.5nm的MgB2超导薄膜。薄膜是相纯的、无氧化的和连续的。7.5 nm的薄膜显示出34 K的Tc（0），这是迄今为止在具有相同厚度的MgB 2中报道的最高Tc（0）。在16 K时，首次证明了10 nm以下的MgB2薄膜的临界电流密度为Jc~10^6 A cm ^{-2}，而7.5 nm以上的样品的临界电流密度为Jc~10^6 A cm ^{-2}。我们的研究结果表明，在Al_2O_3衬底上，厚度为7.5~40 nm的MgB_2薄膜具有优异的超导性能。
英文摘要：
Ultrathin MgB2 superconducting films with a thickness down to 7.5 nm are epitaxially grown on (0001) Al2O3 substrate by hybrid physical-chemical vapor deposition method. The films are phase-pure, oxidation-free and continuous. The 7.5 nm thin film shows a Tc(0) of 34 K, which is so far the highest Tc(0) reported in MgB2 with the same thickness. The critical current density of ultrathin MgB2 films below 10 nm is demonstrated for the first time as Jc ~ 10^6 A cm^{-2} for the above 7.5 nm sample at 16 K. Our results reveal the excellent superconducting properties of ultrathin MgB2 films with thicknesses between 7.5 and 40 nm on Al2O3 substrate.
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