纳米级表面粗糙度对GaAs光电阴极横向能散的影响
Effect of nano-scale surface roughness on transverse energy spread from GaAs photocathodes
摘要：
高的量子产额、低的横向能量扩展和快速的响应时间使得GaAs被激活到负电子亲和势，是高亮度光电注入器中光电阴极的理想候选者。即使经过几十年的研究，从GaAs的电子发射的确切机制没有得到很好的理解。我们发现，纳米级的表面粗糙度可以影响横向电子从GaAs扩散近一个数量级，并解释了迄今为止似乎有争议的实验结果。该模型还可以解释测量的横向能量扩展对入射光波长的依赖性。
英文摘要：
High quantum yield, low transverse energy spread and prompt response time make GaAs activated to negative electron affnity, an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. We show that a nanoscale surface roughness can affect the transverse electron spread from GaAs by nearly an order of magnitude and explain the seemingly controversial experimental results obtained so far. This model can also explain the measured dependence of transverse energy spread on the wavelength of incident light.
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