描述多孔低k材料中等离子体损伤的反应扩散过程中波前传播的饱和
Saturation of front propagation in a reaction-diffusion process describing plasma damage in porous low-k materials
摘要：
我们提出了一个三组分反应扩散系统，其运动界面具有渐近对数时间依赖性。这是自然相关的Stefan问题，其中单侧狄利克雷型和冯诺依曼型边界条件被认为是。我们整合了界面运动对扩散和反应参数的依赖性，并观察到从传输行为和界面运动\sim t^1/2到对数行为\sim ln t的变化作为时间的函数。我们将我们的理论研究结果的传播暴露于低温等离子体中的多孔陶瓷中的碳耗尽。在微电子制造中等离子体损伤的典型实验情况下，在约1分钟后达到该扩散饱和。我们预测的孔隙率和反应速率的一般依赖关系。
英文摘要：
We propose a three-component reaction-diffusion system yielding an asymptotic logarithmic time-dependence for a moving interface. This is naturally related to a Stefan-problem for which both one-sided Dirichlet-type and von Neumann-type boundary conditions are considered. We integrate the dependence of the interface motion on diffusion and reaction parameters and we observe a change from transport behavior and interface motion \sim t^1/2 to logarithmic behavior \sim ln t as a function of time. We apply our theoretical findings to the propagation of carbon depletion in porous dielectrics exposed to a low temperature plasma. This diffusion saturation is reached after about 1 minute in typical experimental situations of plasma damage in microelectronic fabrication. We predict the general dependencies on porosity and reaction rates.
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