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arXiv 1102.0727cond-mat.supr-concond-mat.mtrl-sci
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超导Transition Temperature在电子掺杂铜氧化物异质结构中的反常增强

Anomalous Enhancement of the Superconducting Transition Temperature in Electron-Doped Cuprate Heterostructures

K. Jin, P. Bach, X. H. Zhang, U. Grupel, E. Zohar, I. Diamant, Y. Dagan, S. Smadici, P. Abbamonte, R. L. Greene

摘要:

由欠掺杂(或未掺杂)和过掺杂La% $_{2-x}$ Ce $_{x}$ CuO $_{4}$(LCCO)和Pr $_{2-x}$ Ce $_{x}$ CuO $_{4}$(PCCO)组成的多层电子掺杂铜氧化物薄膜的超导转变温度$T_{c}$相对于相应的单相薄膜的$T_{c}$显著增加。通过研究不同掺杂水平和层厚的超晶格的临界电流密度,我们发现$T_{c}$的增强是由电荷在一个非常大的距离上的重新分布引起的。

英文摘要:

The superconducting transition temperature $T_{c}$ of multilayers of electron-doped cuprates, composed of underdoped (or undoped) and overdoped La% $_{2-x}$Ce$_{x}$CuO$_{4}$ (LCCO) and Pr$_{2-x}$Ce$_{x}$CuO$_{4}$ (PCCO) thin films, is found to increase significantly with respect to the $T_{c}$ of the corresponding single-phase films. By investigating the critical current density of superlattices with different doping levels and layer thicknesses, we find that the $T_{c}$ enhancement is caused by a redistribution of charge over an anomalously large distance.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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