拓扑绝缘体的扭转响应和无耗散粘性
Torsional Response and Dissipationless Viscosity in Topological Insulators
摘要：
我们考虑了二维和三维拓扑绝缘体（TI）中电子自由度的粘弹性响应。我们的主要重点是在2D陈省身绝缘体表现出大量dissipationless粘度类似于量子霍尔粘度预测整数和分数量子霍尔状态。我们表明，无耗散粘度是一个TI的基本晶格几何形状的扭转变形的响应。粘弹性响应还表明，晶体位错在陈绝缘体将携带动量密度。我们简要地讨论了3D的概括，这意味着时间反演不变TI的将表现出量子霍尔粘度在其表面上。
英文摘要：
We consider the visco-elastic response of the electronic degrees of freedom in 2D and 3D topological insulators (TI). Our primary focus is on the 2D Chern insulator which exhibits a bulk dissipationless viscosity analogous to the quantum Hall viscosity predicted in integer and fractional quantum Hall states. We show that the dissipationless viscosity is the response of a TI to torsional deformations of the underlying lattice geometry. The visco-elastic response also indicates that crystal dislocations in Chern insulators will carry momentum density. We briefly discuss generalizations to 3D which imply that time-reversal invariant TI's will exhibit a quantum Hall viscosity on their surfaces.
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