基于通道后向散射的饱和部分弹道nanoMOSFETs微观精确模型
A microscopically accurate model of partially ballistic nanoMOSFETs in saturation based on channel backscattering
摘要：
我们提出了一个模型，部分弹道MOSFET和沟道背散射，是替代众所周知的Lundstrom模型，是更准确的载流子的实际能量分布的角度来看。关键是我们没有使用“虚拟来源”的概念。我们的模型与Lundstrom模型的不同之处在于两个假设：i）从能量势垒的顶部到漏极和从势垒的顶部到源极的反射系数近似相等（而在Lundstrom模型中后者为零），以及ii）通过在势垒顶部向前行进的载流子的平均速度与向后行进的载流子的平均速度之比来假设非弹性散射，1（在Lundstrom模型中=1）。我们支持我们的假设与二维全带蒙特卡罗（MC）模拟，包括量子校正nMOSFET。我们表明，我们的模型允许提取的电气特性的后向散射系数非常接近，从玻尔兹曼输运方程的解决方案，而Lundstrom模型高估后向散射高达40%。
英文摘要：
We propose a model for partially ballistic MOSFETs and for channel backscattering that is alternative to the well known Lundstrom model and is more accurate from the point of view of the actual energy distribution of carriers. The key point is that we do not use the concept of "virtual source". Our model differs from the Lundstrom model in two assumptions: i) the reflection coefficients from the top of the energy barrier to the drain and from top of the barrier to the source are approximately equal (whereas in the Lundstrom model the latter is zero), and ii) inelastic scattering is assumed through a ratio of the average velocity of forward-going carriers to that of backward-going carriers at the top of the barrier kv > 1 (=1 in the Lundstrom model). We support our assumptions with 2D full band Monte Carlo (MC) simulations including quantum corrections in nMOSFETs. We show that our model allows to extract from the electrical characteristics a backscattering coefficient very close to that obtained from the solution of the Boltzmann transport equation, whereas the Lundstrom model overestimates backscattering by up to 40%.
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