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arXiv 1012.5096cond-mat.softcond-mat.mtrl-sciphysics.comp-ph
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任何密度下的位错堵塞

Dislocations Jam At Any Density

Georgios Tsekenis, Nigel Goldenfeld, Karin A. Dahmen

摘要:

结晶材料通过位错滑动雪崩以间歇性方式变形。在临界应力以下,位错由于长程弹性相互作用而堵塞在其滑移平面内,材料表现出塑性响应,而在该临界应力以上,位错是移动的(未堵塞阶段),材料失效。我们使用位错动力学和缩放参数在两个维度上显示,临界应力的增长与位错密度的平方根。因此,位错在任何密度下都会堵塞,而颗粒材料则只在临界密度以下堵塞。

英文摘要:

Crystalline materials deform in an intermittent way via dislocation-slip avalanches. Below a critical stress, the dislocations are jammed within their glide plane due to long-range elastic interactions and the material exhibits plastic response, while above this critical stress the dislocations are mobile (the unjammed phase) and the material fails. We use dislocation dynamics and scaling arguments in two dimensions to show that the critical stress grows with the square root of the dislocation density. Consequently, dislocations jam at any density, in contrast to granular materials, which only jam below a critical density.

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