用Py基交换偏置自旋阀研究溅射IrMn的自旋翻转
A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves
摘要：
为了研究反铁磁体IrMn内的自旋翻转，我们将先前对含有IrMn插入物的基于Py的交换偏置自旋阀的电流周面（CPP）巨磁阻（GMR）研究扩展到更厚的IrMn层-小于或等于5 nm，t（IrMn）小于或等于30 nm。出乎意料的是，AΔR = A[R（AP）- R（P）]--两个Py层的反平行（AP）和平行（P）磁状态之间的电阻率差--并没有随着t（IrMn）的增加而减少，当t（IrMn）大于5 nm时，而是在我们的测量不确定度内变得恒定。这个常数看起来主要是由于一个新的，小的MR在薄Py层。该常数使在体IrMn中分离自旋扩散长度lsf（IrMn）复杂化，但lsf（IrMn）可能较短，小于或等于1 nm。用FeMn发现了类似的结果。
英文摘要：
To study spin flipping within the antiferromagnet IrMn, we extended prior Current-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies of Py-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMn layers-5 nm less than or equal to t(IrMn) less than or equal to 30 nm. Unexpectedly, AΔR = A[R(AP) - R(P)]--the difference in specific resistance between the anti-parallel (AP) and parallel (P) magnetic states of the two Py layers-did not decrease with increasing t(IrMn), for t(IrMn) greater than 5 nm, but rather became constant to within our measuring uncertainty. This constant looks to be due mostly to a new, small MR in thin Py layers. The constant complicates isolating the spin-diffusion length, lsf(IrMn), in bulk IrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm. Similar results were found with FeMn.
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