温度和电压驱动的$W_{x}V_{1-x}O_{2}$纳米线的金属-绝缘体可调转变
Temperature and Voltage Driven Tunable Metal-Insulator Transition in Individual $W_{x}V_{1-x}O_{2}$ nanowires
摘要：
传输测量结果在个别$W_{x}V_{1-x}O_{2}$纳米线与不同程度的$W$掺杂。在这些线中观察到突然的热驱动金属-绝缘体转变（MIT），并且转变温度以-（48-56）K/ $at.%W$的显著速率随着$W$含量的增加而降低，这表明体相图的显著改变。这些纳米线也可以通过电压驱动的MIT驱动，并研究了绝缘体到金属和金属到绝缘体开关的温度依赖性。当从绝缘体驱动到金属时，发生MIT的阈值电压遵循指数温度依赖性（$V_{TH\uparrow}\propto\exp(\nicefrac{-T}{T_{0}})) $），而从金属驱动到绝缘体时，阈值电压遵循$V_{TH\downarrow}\propto\sqrt{T_{c}-T}$，并讨论了这些结果的含义。
英文摘要：
Results from transport measurements in individual $W_{x}V_{1-x}O_{2}$ nanowires with varying extents of $W$ doping are presented. An abrupt thermally driven metal-insulator transition (MIT) is observed in these wires and the transition temperature decreases with increasing $W$ content at a pronounced rate of - (48-56) K/$at.%W$, suggesting a significant alteration of the phase diagram from the bulk. These nanowires can also be driven through a voltage-driven MIT and the temperature dependence of the insulator to metal and metal to insulator switchings are studied. While driving from an insulator to metal, the threshold voltage at which the MIT occurs follows an exponential temperature dependence ($V_{TH\uparrow}\propto\exp(\nicefrac{-T}{T_{0}})) $whereas driving from a metal to insulator, the threshold voltage follows $V_{TH\downarrow}\propto\sqrt{T_{c}-T}$ and the implications of these results are discussed.
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