半导体层中杂质扩散的噪声双稳和随机共振
Noise-created bistability and stochastic resonance of impurities diffusing in a semiconductor layer
摘要：
我们研究了在$D$和外谐势$V(x)$的热噪声辅助下杂质沿半导体层行走的动力学。在最小势附近施加非均匀的热温度可以将外部势修改为非均匀有效势。我们提出了移动和消除沿半导体层的不需要的杂质的方法。此外，在高势垒极限下，研究了杂质的热激活跳跃率与模型参数的关系。通过两态近似，我们还研究了杂质动力学的随机共振（SR），其中诱导动力学的相同噪声源也诱导从单稳态到双稳态的转变，这导致在时变场的存在下的SR。
英文摘要：
We investigate the dynamics of impurities walking along a semiconductor layer assisted by thermal noise of strength $D$ and external harmonic potential $V(x)$. Applying a nonhomogeneous hot temperature in the vicinity of the potential minimum may modify the external potential into a bistable effective potential. We propose the ways of mobilizing and eradicating the unwanted impurities along the semiconductor layer. Furthermore, the thermally activated rate of hopping for the impurities as a function of the model parameters is studied in high barrier limit. Via two state approximation, we also study the stochastic resonance (SR) of the impurities dynamics where the same noise source that induces the dynamics also induces the transition from mono-stable to bistable state which leads to SR in the presence of time varying field.
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