一般绝缘体中的Chern-Simons轨道磁电耦合
Chern-Simons orbital magnetoelectric coupling in generic insulators
摘要：
在第一性原理密度泛函理论的框架下，提出了一种基于Wannier的计算Chern-Simons轨道磁电耦合的方法.鉴于最近的发展与强大的Z2拓扑绝缘体，我们预计，陈-西蒙斯的贡献的磁电耦合，在特殊情况下，可以是一样大或大于总磁电耦合在已知的磁电像Cr2 O3。对普通的Cr_2O_3，BiFeO_3和GdAlO_3磁电体的计算结果证实了在这些情况下Chern-Simons贡献是很小的。另一方面，我们表明，如果空间反转和时间反转对称性的Z2拓扑绝缘体Bi 2 Se 3的手被打破，大的诱导变化出现在陈-西蒙斯磁电耦合。
英文摘要：
We present a Wannier-based method to calculate the Chern-Simons orbital magnetoelectric coupling in the framework of first-principles density-functional theory. In view of recent developments in connection with strong Z2 topological insulators, we anticipate that the Chern-Simons contribution to the magnetoelectric coupling could, in special cases, be as large or larger than the total magnetoelectric coupling in known magnetoelectrics like Cr2O3. The results of our calculations for the ordinary magnetoelectrics Cr2O3, BiFeO3 and GdAlO3 confirm that the Chern-Simons contribution is quite small in these cases. On the other hand, we show that if the spatial inversion and time-reversal symmetries of the Z2 topological insulator Bi2Se3 are broken by hand, large induced changes appear in the Chern-Simons magnetoelectric coupling.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
