PbSe纳米晶和体相载流子倍增路径的数值研究
Numerical Study of Carrier Multiplication Pathways in Nanocrystalline and Bulk Form of PbSe
摘要：
采用带间激子散射模型，我们已经进行了数值研究的直接光生和人口弛豫过程中的纳米晶和散装PbSe的载流子倍增（CM）。我们认为，在这两种情况下，碰撞电离是CM的主要机制。这解释了直接光生对总量子效率（QE）的微弱贡献。研究NC中QE的尺寸缩放以及与散装限度的比较，为实验观察到的趋势提供了微观见解。
英文摘要：
Employing the interband exciton scattering model, we have performed a numerical study of the direct photogeneration and population relaxation processes contributing to carrier multiplication (CM) in nanocrystalline and bulk PbSe. We argue that in both cases the impact ionization is the main mechanisms of CM. This explains weak contribution of the direct photogeneration to the total quantum efficiency (QE). Investigated size scaling of QE in NCs and comparison to the bulk limit provide microscopic insight in the experimentally observed trends.
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