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arXiv 1010.2179cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph
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Half-Heusler拓扑绝缘体:第一性原理的trans-Blaha修正Becke-Johnson密度泛函研究

Half-Heusler Topological Insulators: A First-Principle Study with the Tran-Blaha Modified Becke-Johnson Density Functional

Wanxiang Feng, Di Xiao, Ying Zhang, Yugui Yao

摘要:

利用第一性原理计算系统地研究了半Heusler化合物的拓扑能带结构。本文采用修正的Becke-Johnson交换势和局域密度近似关联势(MBJLDA),得到了精确的能带反转强度和能带阶数。我们的研究结果表明,大量的半Heusler化合物是三维拓扑绝缘体的候选者。讨论了局域密度近似(LDA)和MBJLDA势计算的能带结构之间的差异。

英文摘要:

We systematically investigate the topological band structures of half-Heusler compounds using first-principles calculations. The modified Becke-Johnson exchange potential together with local density approximation for the correlation potential (MBJLDA) has been used here to obtain accurate band inversion strength and band order. Our results show that a large number of half-Heusler compounds are candidates for three-dimensional topological insulators. The difference between band structures obtained using the local density approximation (LDA) and MBJLDA potential is also discussed.

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