耗散环境中单个电荷通过混合转门的逃逸过程
Single-charge escape processes through a hybrid turnstile in a dissipative environment
摘要：
我们研究了嵌入高欧姆环境中的混合超导体--普通金属电子转门的静态电荷俘获特性。该装置包括在旋转栅门一侧的局部Cr电阻器和在另一侧的超导俘获岛。在我们的双结电路中的电子保持时间t2 - 20 s与典型的多结N >= 4的正常金属单电子隧穿器件的电子保持时间t2 - 20 s相当。一个半唯象模型的环境激活隧穿的开关统计分析。实验结果为电学计量提供了依据。
英文摘要：
We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, t ~ 2-20s, in our two-junction circuit are comparable with those of typical multi-junction, N >= 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology.
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