弹性势垒与纳米尺度开关网络的形成
Elastic Barriers and Formation of Nanoscale Switching Networks
摘要：
氧化硅（SiOx）的薄膜是嵌入绝缘g-SiO2基质中的c-Si纳米团簇（NC）的混合物。Tour等人已经表明，沟槽薄膜几何形状使得NC能够在由外加场驱动时形成连续阵列。形成可逆纳米级开关网络（NSN）所需的场在几个循环内迅速减小，或者通过在600 ℃下退火在甚至更少的循环内减小，并且在700 ℃下稳定。在这里，我们讨论了一种弹性机制，解释了为什么在平面Si-SiOx界面上的垂直边缘是形成NSN所必需的。讨论表明，形成机制是内在的，不需要在边缘局部发生，但可以发生在SiOx膜的任何地方，给定的unpinned纳米级垂直边缘的几何形状。
英文摘要：
Thin films of silicon oxide (SiOx) are mixtures of semiconductive c-Si nanoclusters (NC) embedded in an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables the NC to form semiconductive filamentary arrays when driven by an applied field. The field required to form reversible nanoscale switching networks (NSN) decreases rapidly within a few cycles, or by annealing at 600 C in even fewer cycles, and is stable to 700C. Here we discuss an elastic mechanism that explains why a vertical edge across the planar Si-SiOx interface is necessary to form NSN. The discussion shows that the formation mechanism is intrinsic and need not occur locally at the edge, but can occur anywhere in the SiOx film, given the unpinned nanoscale vertical edge geometry.
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