新型高压4 SiC横向双侧壁肖特基（LDSS）整流器的理论研究与分析
A New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Investigation and Analysis
摘要：
在本文中，我们报告了一种新的4 H-SiC横向双侧壁肖特基（LDSS）整流器上的高掺杂漂移层组成的高势垒侧壁肖特基接触的顶部的低势垒肖特基接触。使用二维器件模拟，所提出的设备的性能进行了详细的评估，通过比较其特性与兼容的横向传统肖特基（LCS）和横向沟槽侧壁肖特基（LTSS）整流器的4 H-SiC。从我们的模拟结果中可以观察到，所提出的LDSS整流器在正向偏压条件下充当低势垒LTSS整流器，在反向偏压条件下充当高势垒LTSS整流器，使其成为理想的整流器。LDSS整流器在外延层掺杂为1x 10 e17/cm^3时的开/关电流比（1 V / -500 V）为5.5x10e7。此外，所提出的LDSS结构表现出与PiN二极管类似的非常急剧的击穿，尽管在该结构中仅使用肖特基结。我们分析了LDSS性能提高的原因。
英文摘要：
In this paper, we report a new 4H-SiC Lateral Dual Sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of the low-barrier Schottky contact. Using two-dimensional device simulation, the performance of the proposed device has been evaluated in detail by comparing its characteristics with those of the compatible Lateral Conventional Schottky (LCS) and Lateral Trench Sidewall Schottky (LTSS) rectifiers on 4H-SiC. From our simulation results, it is observed that the proposed LDSS rectifier acts as a low-barrier LTSS rectifier under forward bias conditions and as a high-barrier LTSS rectifier under reverse bias conditions making it an ideal rectifier. The LDSS rectifier exhibits an on/off current ratio (at 1 V / -500 V) of 5.5x10e7 for an epitaxial layer doping of 1x10e17 /cm^3. Further, the proposed LDSS structure exhibits a very sharp breakdown similar to that of a PiN diode in spite of using only Schottky junctions in the structure. We have analyzed the reasons for the improved performance of the LDSS.
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