采用新型表面累积层晶体管（SALTran）概念实现高电流增益PNP晶体管
Realizing high current gain PNP transistors using a novel Surface Accumulation Layer Transistor (SALTran) concept
摘要：
本文报道了一种新的SOI上PNP表面积累层晶体管（SALTran），它利用发射极接触附近空穴的表面积累概念，显著提高了电流增益。使用二维模拟，我们已经详细评估了所提出的设备的性能，通过比较其特性与先前公布的传统PNP横向双极晶体管（LBT）结构。从我们的模拟结果可以看出，根据发射极掺杂和发射极长度的选择，建议SALTran表现出约20倍的兼容横向双极晶体管的电流增益增强，而不会恶化的截止频率。我们已经讨论了基于我们详细的模拟结果的SALTran的性能提高的原因。
英文摘要：
In this paper we report a new PNP Surface Accumulation Layer Transistor (SALTran) on SOI which uses the concept of surface accumulation of holes near the emitter contact to significantly improve the current gain. Using two-dimensional simulation, we have evaluated the performance of the proposed device in detail by comparing its characteristics with those of the previously published conventional PNP lateral bipolar transistor (LBT) structure. From our simulation results it is observed that depending on the choice of the emitter doping and the emitter length, the proposed SALTran exhibits a current gain enhancement of around 20 times that of the compatible lateral bipolar transistor without deteriorating the cut-off frequency. We have discussed the reasons for the improved performance of the SALTran based on our detailed simulation results.
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