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arXiv 1008.2276cond-mat.mtrl-sciquant-ph
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纳米金刚石中氮空位缺陷的表面诱导电荷态转换

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

L. Rondin, G. Dantelle, A. Slablab, F. Grosshans, F. Treussart, P. Bergonzo, S. Perruchas, T. Gacoin, M. Chaigneau, H. -C. Chang, V. Jacques, J. -F. Roch

摘要:

我们提出了一个单一的氮空位(NV)缺陷托管在纳米金刚石(ND)的电荷态转换的研究。我们首先表明,带负电荷的NV $^{-}$缺陷的比例,相对于其中性对应物NV $^{0}$,随着ND的大小而减小。然后,我们提出了一个简单的模型的基础上的一层电子陷阱位于ND表面,这是在良好的协议与记录的统计。通过使用热氧化去除核周围的无定形碳壳,我们证明了NV $^{-}$缺陷的比例显着增加在10纳米核。这些结果对于进一步了解、控制和利用金刚石中带负电荷的NV缺陷的独特性质是非常宝贵的

英文摘要:

We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively-charged NV$^{-}$ defects, with respect to its neutral counterpart NV$^{0}$, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase of the proportion of NV$^{-}$ defects in 10-nm NDs. These results are invaluable for further understanding, control and use of the unique properties of negatively-charged NV defects in diamond

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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