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arXiv 1007.1774cond-mat.mtrl-sci
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Robust half-metallic ferromagnet of cubic VGe3Si4

San-Dong Guo, Bang-Gui Liu

英文摘要:

To seek half-metallic ferromagnets compatible with the GeSi semiconductor, we use state-of-the-art density-functional-theory methods to study cubic $\mathrm{VGe_3Si_4}$. After optimizing its crystal structure with various magnetic orders considered, we find the ferromagnetic structure is the ground state phase and investigate its stability, and then study its spin-resolved electronic structure with an improved method. Our calculated results show that the cubic $\mathrm{VGe_3Si_4}$ is a half-metallic ferromagnet with half-metallic gap 350 meV, and it is structurally stable against deformations and magnetically robust against antiferromagnetic fluctuations. These results make us believe that the cubic $\mathrm{VGe_3Si_4}$ could be synthesized as good thin films soon and used in practical spintronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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