高均匀性和光谱纯度金字塔形位控量子点的生长与结构表征
Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity
摘要：
本文报道了在GaAs（111）B衬底上用金属有机气相外延法生长的金字塔形位控InGaAs量子点的一些基本特性。这些点经由预生长处理在晶片上图案化的金字塔形凹部内自形成。这种生长技术的主要优点是它提供了对点成核位置和衬底上受限结构尺寸的控制。介绍了衬底图形化的基本步骤和量子点的形成机理，并讨论了量子点的结构细节。生长后的过程，包括表面蚀刻和衬底去除，这是所需的，以促进光学表征，进行了讨论。通过这种方法，可以实现极高的均匀性和记录光谱纯度。
英文摘要：
This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation posi-tion and the dimensions of the confined structures onto the sub-strate. The fundamental steps of substrate patterning and the QD forma-tion mechanism are described together with a discussion of the structural particulars. The post-growth processes, including sur-face etching and substrate removal, which are required to facili-tate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved.
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