SrTiO3双电层晶体中静电电荷积累与电化学掺杂的关系
Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors
摘要：
在双电层晶体与SrTiO 3单晶，我们发现静电电荷积累和电化学反应取决于偏置电压之间的显着差异。与低于3.7 V的可逆静电过程（最大片状载流子密度nS为1014 cm-2）相反，电化学过程甚至在去除高于3.75 V的栅极偏压之后也引起持续导电。在2K下的电子迁移率高达104 cm 2/Vs。这种持续的导电起源于SrTiO 3的几微米深度内的缺陷形成。
英文摘要：
In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm-2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm-2 at 5 V, and the electron mobility at 2 K was as large as 104 cm2/Vs. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.
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