非掺杂石墨烯中共振散射体的扩散和临界性
Diffusion and criticality in undoped graphene with resonant scatterers
摘要：
一个通用的理论来描述石墨烯与任意数量的孤立的杂质。该理论提供了一个有效的电荷输运的数值分析的基础，并应用于计算的最小电导率的石墨烯与共振散射体。在光滑共振杂质的情况下，电导率随杂质浓度的增加而线性增长，与对称类DIII的重整化群分析一致。对于空位（或强现场潜在的杂质）的电导率饱和在一个恒定的值，这取决于两个子晶格之间的空位分布的对称类BDI预期。
英文摘要：
A general theory is developed to describe graphene with arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the minimal conductivity of graphene with resonant scatterers. In the case of smooth resonant impurities conductivity grows logarithmically with increasing impurity concentration, in agreement with renormalization group analysis for the symmetry class DIII. For vacancies (or strong on-site potential impurities) the conductivity saturates at a constant value that depends on the vacancy distribution among two sublattices as expected for the symmetry class BDI.
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