Ge在Si（1 1 10）面上的生长演化
Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface
摘要：
我们提出了一个详细的扫描隧道显微镜的研究，描述了从波纹圆顶岛锗的生长过程中的形态过渡的邻Si（1 1 10）表面。我们的实验结果表明，Ge岛在该表面上的形状演化与在平坦Si（001）衬底上的明显不同，是由多个波纹的聚集和合并完成的。通过结合第一性原理计算与连续弹性理论，我们提供了一个准确的解释，我们的实验观察。
英文摘要：
We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By combining first principle calculations with continuum elasticity theory, we provide an accurate explanation of our experimental observations.
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