忆阻器MOS内容寻址存储器（MCAM）：未来高性能搜索引擎的混合结构
Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines
摘要：
大容量内容可寻址存储器（CAM）是各种应用中的关键元件。缩放MOS晶体管不可避免的复杂性给此类系统的实现带来了重大挑战。与CMOS工艺兼容的不同技术的融合可能会使摩尔定律再延长几年。本文提供了一种新的方法对忆阻器（记忆电阻）的设计和建模的内容可寻址存储器（MCAM）使用忆阻器MOS器件的组合，形成一个存储器/比较逻辑单元，形成的CAM架构的构建块的核心。忆阻器的非易失性特性和纳米级几何形状以及与CMOS处理技术的兼容性增加了封装密度，通过禁用CAM块而不丢失存储数据来提供功率管理的新方法，降低了功耗，并且随着技术的成熟具有速度改进的范围。
英文摘要：
Large-capacity Content Addressable Memory (CAM) is a key element in a wide variety of applications. The inevitable complexities of scaling MOS transistors introduce a major challenge in the realization of such systems. Convergence of disparate technologies, which are compatible with CMOS processing, may allow extension of Moore's Law for a few more years. This paper provides a new approach towards the design and modeling of Memristor (Memory resistor) based Content Addressable Memory (MCAM) using a combination of memristor MOS devices to form the core of a memory/compare logic cell that forms the building block of the CAM architecture. The non-volatile characteristic and the nanoscale geometry together with compatibility of the memristor with CMOS processing technology increases the packing density, provides for new approaches towards power management through disabling CAM blocks without loss of stored data, reduces power dissipation, and has scope for speed improvement as the technology matures.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
