碳纳米管薄膜的可控生长、图案化和放置
Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films
摘要：
本论文主要研究碳纳米管（CNT）薄膜的可控生长、图案化和放置。CNT膜的密度通过优化进料气体组成以及化学气相沉积工艺中生长催化剂的浓度来控制。碳纳米管的密度在0.02 ~ 1.29 CNTs/μ m^2之间。然后使用生长前或生长后技术成功地图案化所得的原始CNT薄膜。通过开发与硝酸铁催化剂相容的分层光致抗蚀剂工艺，获得了对流行的预生长图案化方法的显著改进。传统的后生长图案化方法的局限性通过用热塑性或金属印模选择性转印CNT来规避。所得CNT薄膜的生长图案具有与标准光刻相当的边缘粗糙度（< 1 μm）和分辨率（< 5 μm）。底栅CNT薄膜器件的场效应迁移率高达20 cm^2/Vs，开/关比为10^3。这里讨论的图案化和转印方法有可能被推广到包括新的设备配置中的其他纳米材料。
英文摘要：
Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/μm^2 to 1.29 CNTs/μm^2 are obtained. The resulting pristine CNT thin films are then successfully patterned using either pre-growth or post-growth techniques. By developing a layered photoresist process that is compatible with ferric nitrate catalyst, significant improvements over popular pre-growth patterning methods are obtained. Limitations of traditional post-growth patterning methods are circumvented by selective transfer printing of CNTs with either thermoplastic or metallic stamps. Resulting as-grown patterns of CNT thin films have edge roughness (< 1 μm) and resolution (< 5 μm) comparable to standard photolithography. Bottom gate CNT thin film devices are fabricated with field-effect mobilities up to 20 cm^2/Vs and on/off ratios of the order of 10^3. The patterning and transfer printing methods discussed here have a potential to be generalized to include other nanomaterials in new device configurations.
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