纯化石墨表面和空位态：欠配位诱导的量子陷阱抑制和孤π电子极化
Purified graphite surface and vacancy states: undercoordination-induced quantum trap depression and lone pi-electron polarization
摘要：
我们提出了一种简单的方法，用于纯化石墨表面和空位状态，使用角分辨X射线光电子剩余谱（XPS）。补充Ugeda等人的发现[Phys Rev Lett 104，096804（2010）]，结果符合BOLS理论[Sun，Prog Solid State Chem 35，第1-159（2007）号决议]最近的研究表明，欠配位原子之间的较短和较强的键引起局域应变和量子势降低，并与能量和核心的局域致密化有关。电子。较短的原子距离和密集而深的束缚键和核心电荷反过来又束缚了空位附近的未成对π电子，从而产生了观察到的高突起和Dirac EF态。由于极化EF态引起的量子陷阱抑制和屏蔽分裂了晶体势，从而分裂了额外的XPRSC 1 s态。
英文摘要：
We present a simple approach for purifying graphite surface and vacancy states using an angle-resolved x-ray photoelectron residual spectroscopy (XPS). Complementing the discoveries of Ugeda et al [Phys Rev Lett 104, 096804 (2010)], outcomes conform the BOLS theory [Sun, Prog Solid State Chem 35, 1-159 (2007)] expectation and the recent findings that the shorter and stronger bonds between undercoordinated atoms induce local strain and quantum potential depression with an association of local densification of energy and core electrons. The shorter atomic distance and the densely and deeply trapped bonding and core charges polarize in turn the unpaired pi-electrons nearby vacancy, giving rise to the high protrusions and the Dirac EF states as observed. The quantum trap depression and the screening due to the polarized EF states split the crystal potential and hence the extra XPRS C 1s states.
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