离子注入nanoSQUIDs中的磁通噪声
Flux noise in ion-implanted nanoSQUIDs
摘要：
聚焦离子束（FIB）技术已被用于制造微型Nb DC SQUID，其包含连续分流的微桥结和中心环，孔直径范围从1058 nm到50 nm。具有50 nm孔径的最小器件在10^{4} Hz时的白通量噪声水平为2.6 microphy_{0} /Hz^{0.5}。研究了SQUID的磁通噪声特性和聚焦效应随孔径的变化规律。所观察到的低频磁通噪声的不同设备进行了比较，由于在FIB处理和SQUID垫圈中的热激活磁通跳跃的缺陷的自旋波动的贡献。
英文摘要：
Focused ion beam (FIB) technology has been used to fabricate miniature Nb DC SQUIDs which incorporate resistively-shunted microbridge junctions and a central loop with a hole diameter ranging from 1058 nm to 50 nm. The smallest device, with a 50 nm hole diameter, has a white flux noise level of 2.6 microphy_{0}/Hz^{0.5} at 10^{4} Hz. The scaling of the flux noise properties and focusing effect of the SQUID with the hole size were examined. The observed low-frequency flux noise of different devices were compared with the contribution due to the spin fluctuation of defects during FIB processing and the thermally activated flux hopping in the SQUID washer.
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