(Ga,Mn)N纳米晶中反铁磁有序的密度泛函理论研究
Antiferromagnetic order in (Ga,Mn)N nanocrystals: A density functional theory study
摘要:
采用密度泛函理论研究了(Ga,Mn)N纳米晶的电子和磁性。我们研究了掺杂一个或两个替代Mn杂质的纤锌矿和锌铁氧体结构。对于靠近表面放置的单个Mn掺杂剂,空Mn诱导态(下文称为“Mn空穴”)的行为不同于体(Ga,Mn)N。对应于该偏离中心的Mn孔的能级位于导电边缘附近的带隙内。对于两种Mn掺杂剂,最稳定的磁性配置是反铁磁性的,这是出乎意料的,因为(Ga,Mn)N块体在基态显示铁磁性。两个Mn自旋的令人惊讶的反铁磁排列也归因于与位于靠近表面的Mn杂质相关的空穴。与(Ga,Mn)N块体中的Mn孔不同,受限(Ga,Mn)N纳米结构中的这些Mn孔不有助于两个Mn自旋的铁磁对准。
英文摘要:
We investigate the electronic and magnetic properties of (Ga,Mn)N nanocrystals using the density functional theory. We study both wurtzite and zinc-blende structures doped with one or two substitutional Mn impurities. For a single Mn dopant placed close to surface, the behavior of the empty Mn-induced state, hereafter referred to as "Mn hole", is different from bulk (Ga,Mn)N. The energy level corresponding to this off-center Mn hole lies within the nanocrystal gap near the conduction edge. For two Mn dopants, the most stable magnetic configuration is antiferromagnetic, and this was unexpected since (Ga,Mn)N bulk shows ferromagnetism in the ground state. The surprising antiferromagnetic alignment of two Mn spins is ascribed also to the holes linked to the Mn impurities located close to surface. Unlike Mn holes in (Ga,Mn)N bulk, these Mn holes in confined (Ga,Mn)N nanostructures do not contribute to the ferromagnetic alignment of the two Mn spins.
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