InP纳米针的合成及其作为肖特基器件的应用
Synthesis of InP nanoneedles and their use as Schottky devices
摘要：
采用胶体化学方法合成了磷化铟（InP）纳米结构。在适当的条件下，可以在一锅法合成中生成由In头部和InP尾部组成的针形纳米结构，其长度可达几微米。的生长被解释在同时分解的前体和原位生成的In和InP纳米结构。由于它们的特定设计，这种In/InP纳米针适合用作现成的肖特基晶体管。给出了它们的传输特性和输出特性。
英文摘要：
Indium phosphide (InP) nanostructures have been synthesized by means of colloidal chemistry. Under appropriate conditions needle-shaped nanostructures composed of an In head and an InP tail with lengths up to several micrometers could be generated in a one-pot synthesis. The growth is interpreted in terms of simultaneous decomposition of the In precursor and in situ generation of In and InP nanostructures. Owing to their specific design such In/InP nanoneedles suit the use as ready-made Schottky transistors. Their transfer and output characteristics are presented.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
