应变I型半导体纳米环中反交叉诱导的光激子Aharonov-Bohm效应
Anticrossing-induced optical excitonic Aharonov-Bohm effect in strained type-I semiconductor nanorings
摘要：
计算了应变（In，Ga）As纳米环在GaAs基体中的激子态.从连续介质力学模型中提取应变分布，采用精确对角化方法计算激子态。激子基态能量随垂直于环的磁场的微弱振荡是激子Aharonov-Bohm效应的表现。这些振荡产生于基态和第二激子态之间的反交叉，并且可以通过增加环宽度来增强。同时，激子复合的振子强度呈现振荡，其叠加在随磁场线性增加的基础上。所得到的结果与以前的理论结果进行了对比的1D环，和差异被解释为产生不同的限制电位的电子和空穴，和大的抗磁位移存在于分析的I型环。此外，我们的理论同意定性以及与以前的光致发光测量II型InP/GaAs量子点。
英文摘要：
The exciton states in strained (In,Ga)As nanorings embedded in a GaAs matrix are computed. The strain distribution is extracted from the continuum mechanical model, and the exact diagonalization approach is employed to compute the exciton states. Weak oscillations of the ground exciton state energy with the magnetic field normal to the ring are an expression of the excitonic Aharonov-Bohm effect. Those oscillations arise from anticrossings between the ground and the second exciton state and can be enhanced by increasing the ring width. Simultaneously, the oscillator strength for exciton recombination exhibits oscillations, which are superposed on a linear increase with magnetic field. The obtained results are contrasted with previous theoretical results for 1D rings, and differences are explained to arise from different confinement potentials for the electron and the hole, and the large diamagnetic shift present in the analyzed type-I rings. Furthermore, our theory agrees qualitatively well with previous photoluminescence measurements on type-II InP/GaAs quantum dots.
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