纳米-体材料交叉区纠缠光子的产生
Entangled-photon generation in nano-to-bulk crossover regime
摘要：
我们从理论上研究了在纳米到体的交叉区域内，半导体薄膜中双激子产生纠缠光子的过程。与量子点和块体材料的情况不同，在纳米到微米的厚度范围内，通过设计激子-光子耦合模的特殊能量结构，可以高度控制纠缠光子的产生态。由于在此厚度范围内激子的辐射衰减速率的增强，所产生的光子对的统计精度可以提高，超出了与信号强度的权衡问题。通过实施光学谐振腔结构，可以在保持高统计精度的同时提高生成效率。
英文摘要：
We have theoretically investigated a generation of entangled photons from biexcitons in a semiconductor film with thickness in nano-to-bulk crossover regime. In contrast to the cases of quantum dots and bulk materials, we can highly control the generated state of entangled photons by the design of peculiar energy structure of exciton-photon coupled modes in the thickness range between nanometers and micrometers. Owing to the enhancement of radiative decay rate of excitons at this thickness range, the statistical accuracy of generated photon pairs can be increased beyond the trade-off problem with the signal intensity. Implementing an optical cavity structure, the generation efficiency can be enhanced with keeping the high statistical accuracy.
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