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arXiv 1003.0074cond-mat.mtrl-scicond-mat.supr-con
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铊基III-V-VI $_2$三元硫系化合物拓扑绝缘体的理论预测

Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI$_2$ Ternary Chalcogenides

Binghai Yan, Chao-Xing Liu, Hai-Jun Zhang, Chi-Yung Yam, Xiao-Liang Qi, Thomas Frauenheim, Shou-Cheng Zhang

摘要:

我们预测了一类新的三维拓扑绝缘体在铊基III-V-VI族$_2$三元硫族化合物中的存在,包括TlBiQ $_2$和TlSbQ $_2$(Q = Te,Se和S).这些拓扑绝缘体具有坚固而简单的表面态,由$Γ$点处的单个狄拉克锥组成。利用第一性原理计算和有效场论模型阐明了拓扑绝缘行为的机理。值得注意的是,此类拓扑绝缘体TlBiTe $_2$在掺杂$p$型载流子时也是超导体。我们讨论了这种材料可能是拓扑超导体的可能性。另一种材料TlSbS $_2$在拓扑绝缘体和平凡绝缘体相之间的边界上,其中拓扑相变可以由压力驱动。

英文摘要:

We predict a new class of three dimensional topological insulators in thallium-based III-V-VI$_2$ ternary chalcogenides, including TlBiQ$_2$ and TlSbQ$_2$ (Q = Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the $Γ$ point. The mechanism for topological insulating behavior is elucidated using both first principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe$_2$ is also a superconductor when doped with $p$-type carriers. We discuss the possibility that this material could be a topological superconductor. Another material TlSbS$_2$ is on the border between topological insulator and trivial insulator phases, in which a topological phase transition can be driven by pressure.

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