量子阱红外探测器对能带分布非理想性的耐受性
Quantum well infrared photodetectors hardiness to the non ideality of the energy band profile
摘要：
本文报道了量子阱红外探测器中非锐势和无序势效应的研究结果。扫描电子透射显微镜是用来测量合金的结构，这是显示出沿生长轴的组合物的梯度分布。这些测量值用作输入，以量化对检测器性能的影响（峰值波长、光谱展宽和暗电流）。掺杂的随机定位的影响也进行了研究。最后，我们证明了量子力学性质是相当强大的非理想的能带轮廓方面。
英文摘要：
We report results on the effect of a non-sharp and disordered potential in Quantum Well Infrared Photodetectors (QWIP). Scanning electronic transmission microscopy is used to measure the alloy profile of the structure which is shown to present a gradient of composition along the growth axis. Those measurements are used as inputs to quantify the effect on the detector performance (peak wavelength, spectral broadening and dark current). The influence of the random positioning of the doping is also studied. Finally we demonstrate that QWIP properties are quite robust with regard to the non ideality of the energy band profile.
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