纳米异质结的超对称性
Supersymmetry Across Nanoscale Heterojunction
摘要：
我们认为，超对称变换可以应用于通过连接两个混合半导体形成的异质结。一个一般的框架，描述了通过指定的结构的阶梯算子的交界处作出定量估计的物理量。对于一个特定的异质结器件，我们表明，一个纳米级掺杂层内的指数分级是服从精确的分析处理的一类潜在的扭曲通过转换的莫尔斯型潜力的解决方案的结。
英文摘要：
We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.
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