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arXiv 1002.1637cond-mat.mtrl-sci
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多铁性双弛豫体的制备与表征

Processing and Characterization of Multiferroic Bi-relaxors

Ashok Kumar, R. S. Katiyar, J. F. Scott

摘要:

我们比较了化学溶液沉积(CSD)和脉冲激光沉积(PLD),新的室温,单相,多铁性磁电,[PbFe 2/3 W1/3 O3]x[PbZr0.53Ti0.47O3]1-x(PZTFWx ~ 0.40<x<0.20)与极化,损耗(<1%)和电阻率(通常108 ohm.cm)等于或优于BiFeO 3的标本。采用CSD法在镀铂硅衬底上制备了单相多晶PZTFWx薄膜,并采用PLD法在MgO衬底上外延生长了PZTFWx单晶薄膜。在这些材料中观察到高介电常数(1200- 3000)、高极化(30 - 60 μ C/cm 2)、弱饱和磁化强度(0.48 - 4.53 emu/cm 3)、宽介电温度峰、高频色散、低介电损耗和低漏电流,表明该家族可作为室温多铁性器件的候选者。这些材料中的铁电开关可以通过施加磁场来抑制或猝灭。

英文摘要:

We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to or superior to BiFeO3. Single phase polycrystalline multiferroics PZTFWx thin films were fabricated on platinized silicon substrate by CSD and as epitaxial single-crystal films on MgO substrate by PLD. High dielectric constants (1200- 3000), high polarization (30 - 60 micro C/cm2), weak saturation magnetization (0.48 - 4.53 emu/cm3), a broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current were observed in these materials, suggesting the family as candidates for room-temperature multiferroic devices. The ferroelectric switching in these materials can be suppressed or quenched with applied magnetic field.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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