arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1001.0102cond-mat.supr-concond-mat.str-el
收藏

双极性高温铜氧化物空穴-电子掺杂侧的化学势跃变

Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate

M. Ikeda, M. Takizawa, T. Yoshida, A. Fujimori, Kouji Segawa, Yoichi Ando

摘要:

为了研究空穴和电子掺杂的高Tc超导体之间的本征化学势跳跃,我们对Y0.38La0.62Ba1.74La0.26Cu3Oy(YLBLCO)进行了芯能级X射线光电子能谱(XPS)测量,其中可以在保持相同的晶体结构的情况下掺杂空穴和电子。与空穴掺杂的La_(2-x)Sr_xCuO_4和电子掺杂的Nd_(2-x)Ce_xCuO_4的情况不同,我们估计空穴掺杂和电子掺杂的YLBLCO之间的真实化学势跃变约为0.8eV,这比报道的母体绝缘化合物的光学带隙1.4- 1.7eV小得多。我们归因于减少跳跃的间接性质的电荷激发间隙,以及掺杂载流子的极化性质。

英文摘要:

In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and the electron-doped system Nd_2-xCexCuO4, we have estimated the true chemical potential jump between the hole- and electron-doped YLBLCO to be ~0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑