扁平磁屏蔽间超导带材的磁滞交流损耗
Hysteretic ac losses in a superconductor strip between flat magnetic shields
摘要:
本文用Bean临界状态模型计算了位于两个无限磁导率的平板磁屏蔽之间的载流超导薄带的磁滞交流损耗。对于平行于带材平面取向的屏蔽体,自感磁场的穿透增强,并且交流损耗的电流依赖性类似于隔离超导体板中的电流依赖性,而对于垂直于带材平面取向的屏蔽体,自感磁场的穿透被削弱,并且AC损耗的电流依赖性类似于两侧有两个平行超导屏蔽的超导体带中的AC损耗的电流依赖性。因此,滞后交流损耗可以大大增加或,分别减弱时,屏蔽接近带。
英文摘要:
Hysteretic ac losses in a thin, current-carrying superconductor strip located between two flat magnetic shields of infinite permeability are calculated using Bean's model of the critical state. For the shields oriented parallel to the plane of the strip, penetration of the self-induced magnetic field is enhanced, and the current dependence of the ac loss resembles that in an isolated superconductor slab, whereas for the shields oriented perpendicular to the plane of the strip, penetration of the self-induced magnetic field is impaired, and the current dependence of the ac loss is similar to that in a superconductor strip flanked by two parallel superconducting shields. Thus, hysteretic ac losses can strongly augment or, respectively, wane when the shields approach the strip.
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