具有AlMnAs势垒的GaMnAs-based磁性隧道结
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier
摘要：
我们研究了自旋相关的输运的GaMnAs基磁性隧道结（MTJ）含有顺磁性AlMnAs势垒与不同的厚度。AlMnAs相对于GaMnAs的费米能级的势垒高度估计为110 meV。我们观察到的隧道磁电阻（TMR）的比率高达175%（在2.6 K），这是高于那些的GaMnAs为基础的MTJ与其他势垒材料在相同的温度区域。这些高的TMR比主要归因于AlMnAs相对高的晶体质量和在面内波矢k附近的隧穿几率的抑制||=0。
英文摘要：
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is estimated to be 110 meV. We observe tunneling magnetoresistance (TMR) ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-based MTJs with other barrier materials in the same temperature region. These high TMR ratios can be mainly attributed to the relatively high crystal quality of AlMnAs and the suppression of the tunneling probability near at the in-plane wave-vector k||=0.
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