多电极双栅横向隧穿晶体管中电势和场强的计算
The calculus of the electric potential and field intensity in multiple electrodes lateral tunneling transistors with double gate
摘要：
本文提出了一种自适应超松弛方法，用于计算包含分裂栅和屏蔽边界的复杂隧道晶体管结构的电势和场强。该方法的精度和速度进行了数值测试，并发现满意的研究，这样的设备通过计算得到的潜在分布的隧道电流。
英文摘要：
The paper presents an adaptive over-relaxation method for calculating the electric potential and field intensity, for a complex tunnel transistor structure involving a split gate and a shielding boundary. The accuracy and speed of the method has been numerically tested and found satisfactory for the study of such devices by calculating the tunneling currents for the obtained potential distribution.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
